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| SI1904EDH New Product Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 1.04 @ VGS = 2.5 V 0.65 rDS(on) (W) 0.810 @ VGS = 4.5 V ID (A) 0.73 D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch D1 D2 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CB XX YY G1 Lot Traceability and Date Code Part # Code 2 kW G2 2 kW G1 2 5 G2 D2 3 4 S2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS 0.61 0.74 0.38 -55 to 150 0.53 2 0.48 0.57 0.30 W _C 0.46 A Symbol VDS VGS 5 secs 25 Steady State Unit V "8 0.73 0.64 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71445 S-03929--Rev. B, 21-May-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W C/W 1 SI1904EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) rDS(on) gfs VSD VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.64 A VGS = 2.5 V, ID = 0.2 A VDS = 10 V, ID = 0.64 A IS = 0.48 A, VGS = 0 V 2 0.630 0.830 1.1 0.80 1.2 0.810 1.04 W S V 0.6 "1 "1 1 5 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 0.64 A 0.66 0.14 0.26 42 85 200 160 65 130 300 240 ns 1.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 2.0 10,000 1,000 I GSS - Gate Current (mA) 1.6 I GSS - Gate Current (mA) 100 10 Gate Current vs. Gate-Source Voltage 1.2 TJ = 150_C 1 0.1 0.01 0.001 TJ = 25_C 0.8 0.4 0.0 0 3 6 9 12 0.0001 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71445 S-03929--Rev. B, 21-May-01 2 SI1904EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.0 VGS = 5 thru 3.5 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 1.5 3V 2.0 TC = -55_C 25_C Vishay Siliconix Transfer Characteristics 125_C 1.0 1.0 2V 0.5 1V 0.0 0 1 2 3 4 1.5 V 0.5 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 80 Capacitance r DS(on) - On-Resistance ( W ) 1.6 C - Capacitance (pF) 60 1.2 VGS = 2.5 V 0.8 VGS = 4.5 V Ciss 40 Coss Crss 20 0.4 0.0 0.0 0 0.5 1.0 ID - Drain Current (A) 1.5 2.0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.64 A 1.8 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) 4 1.6 VGS = 4.5 V ID = 0.64 A 1.4 3 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71445 S-03929--Rev. B, 21-May-01 www.vishay.com 3 SI1904EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 2 TJ = 150_C r DS(on) - On-Resistance ( W ) 1 I S - Source Current (A) 1.6 ID = 0.2 A 1.2 ID = 0.64 A 2.0 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 0.8 0.4 0.1 0 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 250 mA 0.1 V GS(th) Variance (V) 5 Single Pulse Power, Junction-to-Ambient 4 -0.0 Power (W) 3 -0.1 2 -0.2 1 -0.3 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71445 S-03929--Rev. B, 21-May-01 SI1904EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71445 S-03929--Rev. B, 21-May-01 www.vishay.com 5 |
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